Switches

Switching Controllers 78V wide VIN bidirec tional 4-switch buc

Mid-Range Relays, 2 Form C, DPDT, 2 C/O, Coil Suppression Diode, Gold Terminal Plating, 5 A, 28 VDC Coil Voltage, CII FCB-205 Series The M83536/2-024M is a hermetically sealed electromechanical power relay built to comply with the MIL-PRF-83536 military specification family, a standard governing high-reliability relays intended for use in demanding military, aerospace, and defense electronic systems. Devices manufactured under this specification series are designed to meet stringent requirements for mechanical ruggedness, electrical performance consistency, and long-term reliability under the extreme vibration, shock, temperature cycling, and altitude conditions typically encountered in airborne, shipboard, and ground military platforms. This relay is configured as a double-pole, double-throw switching device, meaning it provides two independently switched sets of contacts that can each connect to one of two possible circuit paths, controlled by a single energized coil. This configuration is commonly used in applications requiring simultaneous switching of two separate circuits, such as redundant power path switching, dual-channel signal routing, or coordinated control of multiple subsystems from a single control signal. The relay operates on momentary, non-latching actuation, meaning the contacts return to their de-energized state as soon as coil power is removed, rather than remaining in their last-commanded position. The coil is designed for direct-current control voltage typical of military and aerospace 28-volt electrical systems, a standard power bus voltage used extensively in aircraft, military vehicles, and shipboard electrical systems. The device's flange-style mounting construction allows it to be securely fastened to a chassis or panel, providing the mechanical stability needed to maintain reliable contact performance under the sustained vibration and shock loading common in military platform environments. Internal contact construction uses a silver-cadmium-oxide contact material, chosen for its strong arc-resistance and resistance to contact welding under repeated switching of inductive or resistive loads. As a hermetically sealed device manufactured to a formal military specification, the relay undergoes rigorous qualification and lot-acceptance testing to verify long-term mechanical and electrical performance, including extended life-cycle switching tests, vibration and shock qualification, and environmental exposure testing. This makes the part suitable for use in flight-critical, mission-critical, or other high-reliability electromechanical switching applications where field failure is not an acceptable risk. The relay is supplied with through-hole solder-pin terminations for both coil and contact connections, supporting traditional through-hole assembly methods consistent with the conservative, well-proven manufacturing processes favored in military and aerospace hardware production. Spec Sheet Identification Part Number: M83536/2-024M Specification Family: MIL-PRF-83536 Manufacturer: TE Connectivity (CII) Functional Classification Device Type: Electromechanical power/signal relay Contact Configuration: Double-pole, double-throw (DPDT) Actuation Type: Momentary, non-latching Coil Input Type: DC control Electrical Characteristics Coil Voltage: Military-standard 28V DC class Coil Resistance: Moderate coil resistance class Contact Rating: Mid-range current switching class Contact Voltage Rating: Compatible with 28V DC and standard AC switching voltages Output Type: AC/DC switching capable Contact & Construction Details Contact Material: Silver-cadmium-oxide (AgCdO) Contact Form: 2 Form C (DPDT, normally open/normally closed) Sealing: Hermetically sealed construction Mounting Style: Flange mount, through-hole Environmental & Qualification Specification Compliance: MIL-PRF-83536 military relay specification Application Class: Military and aerospace electromechanical switching Export Classification: EAR99 export control classification RoHS Compliance: Yes Mechanical Specifications Termination: Solder pin, through-hole Mounting Type: Through-hole, flange-mounted Build Style: Mid-range relay form factor consistent with the M83536 family Packaging Supply Format: Individually packaged per military relay handling and ESD protection standards #M83536 #TEConnectivity #MilitaryRelay #AerospaceRelay #MILPRF83536 #DPDTRelay #ElectromechanicalRelay #HermeticallySealed #PowerRelay #SignalRelay #DefenseElectronics #AviationElectronics #FlangeMount #ThroughHole #MilAeroComponent #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #HighReliabilityRelay

4A Gate Driver RF Coupling 2500Vrms 1 Channel 8-SOIC Confirmed — this is a Skyworks (formerly Silicon Labs) Si827x-family isolated gate driver, single-channel, with deglitch and UVLO, in the "GBD" variant (3V UVLO threshold). Here's the spec. Engineering Specification — Si8271GBD-IS Manufacturer: Skyworks Solutions, Inc. (formerly Silicon Labs) Device Family: Si827x ISOdriver General Description The Si8271GBD-IS is a single-channel isolated gate driver integrated circuit manufactured by Skyworks Solutions, designed to drive power switching devices such as MOSFETs, IGBTs, and wide-bandgap SiC or GaN FETs in power conversion applications. The device uses Skyworks' proprietary silicon-based galvanic isolation technology rather than the optical isolation used in traditional optocoupler-based gate drivers, providing a more robust, longer-lasting, and more precisely matched isolation barrier between the low-voltage control circuitry and the high-voltage power switching stage. This isolation approach delivers several advantages over legacy optocoupler solutions, including significantly higher common-mode transient immunity, which allows the device to maintain reliable signal integrity even when subjected to the very fast voltage transients generated by high-speed switching in modern power converters. The device's high noise immunity prevents these switching-induced transients from corrupting the gate drive signal, eliminating a common failure mode in less robust isolated driver designs where fast edge rates can cause spurious switching or loss of control. The silicon isolation technology also provides tighter timing specifications, reduced timing variation across temperature and device lifetime, and better part-to-part matching than optocoupler-based alternatives, all of which contribute to more predictable and efficient power stage operation. The device includes an integrated de-glitch filtering circuit on its input, which screens out short noise spikes or unwanted transitions on the control input before they can be passed through to the gate drive output, improving overall system robustness in electrically noisy environments. Undervoltage lockout protection is built into the device, automatically disabling the gate drive output if the supply voltage falls below a safe operating threshold, protecting the driven power switch from being driven with insufficient gate voltage, which could otherwise lead to excessive conduction losses or device damage. The device also provides a dead-time programming feature, allowing designers to precisely tune the timing margin between switching transitions in half-bridge or similar topologies, helping to prevent shoot-through conditions while minimizing unnecessary dead time that would otherwise reduce converter efficiency. The Si8271GBD-IS operates from a wide input supply voltage range and supports drive voltages suitable for a broad range of gate drive requirements, making it adaptable to many different power switch types and converter topologies. It is built to operate reliably across a wide ambient temperature range, supporting use in demanding industrial, telecom, and renewable energy power conversion environments. The device is housed in a compact surface-mount package suited to dense power converter board layouts, and its construction reflects the long-life, high-reliability design philosophy that distinguishes silicon-isolation-based gate drivers from optocoupler-based alternatives. Spec Sheet Identification Part Number: Si8271GBD-IS Device Family: Si827x ISOdriver series Manufacturer: Skyworks Solutions (formerly Silicon Labs) Functional Classification Device Type: Single-channel isolated gate driver Isolation Technology: Proprietary silicon-based galvanic isolation Driven Device Types: MOSFETs, IGBTs, SiC FETs, GaN FETs Output Configuration: Separate pull-up/pull-down driver outputs Isolation & Noise Performance Isolation Withstand Voltage: High-voltage reinforced isolation rating per UL1577 and VDE0884 standards Common-Mode Transient Immunity (CMTI): High-performance CMTI rating for fast-switching robustness Input Filtering: Integrated de-glitch circuit for noise rejection Protection & Control Features Undervoltage Lockout (UVLO): Integrated UVLO fault protection with driver shutdown Dead-Time Control: Precision dead-time programmability via dedicated control pin Input Logic: TTL-level compatible input with wide noise-margin hysteresis Electrical Characteristics Input Supply Voltage Range: Wide-range low-voltage logic supply Drive Supply Voltage: Higher-voltage gate drive supply rail support Propagation Delay: Fast, tightly specified propagation timing Environmental & Qualification Operating Temperature Range: Extended industrial temperature range RoHS Compliance: Yes Lifecycle Status: Active production Package Package Type: Narrow-body small-outline surface-mount package (SOIC-8) Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tube or tape-and-reel packaging options #Si8271 #Si827x #Skyworks #SiliconLabs #IsolatedGateDriver #ISOdriver #GateDriverIC #MOSFETDriver #IGBTDriver #SiCFET #GaNDriver #PowerElectronics #GalvanicIsolation #CMTI #SOIC #SurfaceMount #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant

TPS61088RHLR — Texas Instruments 10-A synchronous boost converter in RHL 20-pin VQFN package with exposed thermal pad. PCB footprint uses 21 pads: 20 perimeter terminals plus the exposed PGND thermal pad. Features 2.7 V to 12 V input, 4.5 V to 12.6 V adjustable output, 200 kHz to 2.2 MHz programmable switching frequency, programmable soft start, adjustable switch peak-current limit, 13.2 V output overvoltage protection, cycle-by-cycle overcurrent protection, and thermal shutdown. #commonpartslibrary #integratedcircuit #powermanagement #voltageregulator

High-Side Gate Driver IC Non-Inverting 19-VSSOP The TPS48100QDGXRQ1 is an automotive-grade dual high-side gate driver integrated circuit manufactured by Texas Instruments. It is designed to drive external N-channel power MOSFETs configured as high-side switches, providing the gate-drive voltage and current needed to turn the switches fully on and off with controlled timing. The device targets automotive and other harsh-environment power switching applications where a robust, low quiescent current solution is needed to control loads such as motors, relays, solenoids, lighting, and other inductive or resistive loads powered from a vehicle battery rail. As a member of TI's automotive low-IQ high-side driver portfolio, the device is built to tolerate the wide voltage swings and transient conditions characteristic of automotive electrical systems, including load dump events and cold-crank voltage sags, while maintaining very low standby current draw when the driven loads are not active. This low quiescent current characteristic is particularly valuable in always-on automotive modules, where minimizing parasitic battery drain during vehicle-off states is a key design requirement. The device's two independent driver channels operate synchronously, allowing coordinated control of dual high-side switches from a shared set of control and protection circuitry, which is useful in applications such as dual-channel load switching, H-bridge-adjacent driver stages, or redundant power path control. The non-inverting input structure means that the gate driver outputs follow the logic state of the input control signals directly, simplifying integration with microcontroller-based control logic without requiring additional inverting stages. Internally, the device manages the charge pump or bootstrap circuitry needed to generate a gate voltage above the battery rail, which is necessary to fully enhance an N-channel MOSFET configured in the high-side position. This internal voltage generation simplifies the external bill of materials compared to discrete charge-pump driver implementations. The device is qualified to automotive electronics reliability standards, reflecting the rigorous stress testing and quality requirements expected of components used in vehicle electrical and powertrain-adjacent systems. It is housed in a small-outline surface-mount package suited to space-constrained automotive control module designs, and it is supplied in tape-and-reel or cut-tape packaging formats to support both high-volume automated assembly and lower-volume prototyping needs. Spec Sheet Identification Part Number: TPS48100QDGXRQ1 Device Family: TPS48100-Q1 Manufacturer: Texas Instruments Functional Classification Device Type: Dual high-side gate driver IC Driven Configuration: High-side Channel Type: Synchronous, dual independent drive channels Gate Type Driven: N-channel power MOSFET Input Logic: Non-inverting Electrical Characteristics Supply Voltage Range: Wide automotive-class supply range Quiescent Current: Low-IQ class, optimized for always-on automotive modules Output Drive Current: Symmetric source and sink peak output current Internal Gate Drive Generation: Integrated charge pump/bootstrap-style high-side gate drive generation Protection & Diagnostics Application Context: Suited for protected high-side switching designs typical of the automotive driver family Robustness: Designed to tolerate automotive transient and load-dump conditions Environmental & Qualification Temperature Grade: Extended automotive operating temperature range Automotive Qualification: AEC-Q100 qualified RoHS Compliance: Yes Package Package Type: Small-outline surface-mount package, VSSOP style Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tape-and-reel, cut-tape, or reel-on-demand packaging options #TPS48100 #TexasInstruments #GateDriver #HighSideDriver #AutomotiveIC #AECQ100 #PowerManagement #MOSFETDriver #LowIQ #VSSOP #SurfaceMount #AutomotiveElectronics #PowerSwitching #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #VehicleElectronics #PCBDesign