Diodes
A diode is a two-terminal electronic component that conducts current primarily in one direction. It is made up of a semiconductor material and has the ability to allow current to pass through it in one direction while blocking current in the opposite direction. Diodes have a wide range of use cases, including rectification, voltage regulation, signal detection, and power management. They are essential components in electronic circuits and can be found in a variety of electronic devices, including computers, smartphones, and appliances. Flux.ai is the world's largest community-driven public library of diodes, with a vast collection of footprints, symbols, datasheets, and simulation models. It is a valuable resource for anyone looking to learn about or work with diodes. Whether you are a student, engineer, or hobbyist, you can find the information and resources you need at Flux.ai to help you understand and work with diodes in your projects.
TPD1E10B06DYAR
Single-Channel ESD Protection TVS Diode – Bidirectional transient voltage suppressor (TVS) diode for ESD protection of USB, GPIO, data lines, and other low-voltage high-speed interfaces. Features a 5.5 V reverse standoff voltage (VRWM), 6 V minimum breakdown voltage, 14 V maximum clamping voltage at 1 A, and ±30 kV IEC 61000-4-2 contact and air-gap ESD protection. Provides 6 A (8/20 µs) surge current capability, 12 pF typical capacitance, 100 nA maximum leakage current, and 0.4 Ω typical dynamic resistance. Operates over a −40°C to +125°C temperature range and is housed in a 2-pin SOT-523 (DYA) package. #TexasInstruments #TPD1E10B06DYAR #TPD1E10B06 #TVSDiode #ESDProtection #TransientVoltageSuppressor #CircuitProtection #USBProtection #GPIOProtection #SurgeProtection #SOT523 #EmbeddedSystems
17 Uses0 StarsSS36-E3/9AT
Schottky Barrier Rectifier Diode – 3 A Schottky rectifier diode optimized for switch-mode power supplies (SMPS), DC-DC converters, reverse polarity protection, freewheeling, OR-ing circuits, and general power management applications. Features a 60 V repetitive peak reverse voltage (VRRM), 3 A average forward current (IF(AV)), and 750 mV maximum forward voltage drop at 3 A for high-efficiency, low-loss operation. Offers fast switching performance, 500 µA maximum reverse leakage current at 60 V, 100 A non-repetitive surge current (IFSM), and an integrated Schottky barrier structure for improved efficiency and reduced power dissipation. Rated for operation over a −55°C to +150°C junction temperature range and housed in a DO-214AB (SMC) surface-mount package. #Vishay #SS36E39AT #SS36 #SchottkyDiode #Rectifier #PowerDiode #SMPS #DCDCConverter #ReversePolarityProtection #PowerManagement #SMC #EmbeddedSystems
41 Uses0 StarsPRTR5V0U4D,125
Ultra-Low Capacitance Quad-Channel ESD Protection Array – Four-channel rail-to-rail transient voltage suppressor (TVS) / ESD protection array designed to protect high-speed data and communication interfaces including USB 2.0, HDMI, DVI, Ethernet, mobile devices, and embedded systems from electrostatic discharge (ESD) and transient overvoltage events. Features ultra-low 1 pF input/output capacitance to preserve signal integrity on high-speed lines, 6 V minimum breakdown voltage, and IEC 61000-4-2 Level 4 ESD protection (±8 kV contact discharge) with very low clamping voltage through an integrated rail-to-rail steering diode architecture. Includes four unidirectional protection channels, low reverse leakage current, and AEC-Q101 qualification for automotive applications. Specified for operation over a −55°C to +150°C ambient temperature range and housed in a compact 6-pin TSOP (SOT-457 / SC-74) surface-mount package. #Nexperia #PRTR5V0U4D125 #PRTR5V0U4D #TVSDiode #ESDProtection #TransientProtection #USBProtection #HDMIProtection #DVISProtection #HighSpeedInterface #AutomotiveElectronics #EmbeddedSystems
21 Uses0 StarsSQJ128ELP-T1_GE3
Automotive N-Channel Power MOSFET – 30 V N-channel TrenchFET® Gen IV power MOSFET optimized for automotive power distribution, battery management systems (BMS), motor drives, DC-DC converters, load switching, and high-current embedded power applications. Features a 30 V drain-to-source voltage (VDS), 437 A continuous drain current (TC = 25°C), and ultra-low RDS(on) of 1.16 mΩ maximum at VGS = 10 V (1.66 mΩ maximum at VGS = 4.5 V) for exceptionally low conduction losses. Offers ±20 V gate-to-source voltage, 595 A pulsed drain current, 500 W maximum power dissipation, low gate charge, optimized Qgd/Qgs ratio for fast switching, and an integrated body diode for high-efficiency switching applications. Qualified to AEC-Q101, 100% Rg and UIS tested, and specified for operation over a −55°C to +175°C junction temperature range. Housed in a PowerPAK® SO-8L surface-mount package. #Vishay #SQJ128ELPT1GE3 #SQJ128ELP #NChannelMOSFET #TrenchFET #PowerMOSFET #DCDCConverter #BatteryManagement #MotorDrive #AutomotiveElectronics #PowerPAKSO8L #EmbeddedSystems
4 Uses0 Stars
